ESD5304D will semiconductor ltd. 1 revision 1.5, 2017/05/10 ESD5304D 4-lines, uni-directional, ultra-low capacitance transient voltage suppressors descriptions the ESD5304D is an ultra-low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESD5304D incorporates four pairs of ultra-low capacitance steering diodes plus a tvs diode. the ESD5304D may be used to provide esd protection up to 20kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the ESD5304D is available in dfn2510-10l package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max. ? transient protection for each line according to iec61000-4-2 (esd): 20kv (contact discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.4pf typ. ? ultra-low leakage current: i r <1na typ. ? low clamping voltage: v cl = 14v typ. @ i pp = 16a (tlp) ? solid-state silicon technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3, hdmi 1.4 and hdmi 2.0 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics and notebooks http//:www.sh-willsemi.com dfn2510-10l (bottom view) pin configuration (top view) 5v4 = device code * = month code ( a~z) marking order information device package shipping ESD5304D-10/tr dfn2510-10l 3000/tape&reel 12345 6 7 8 9 10 i/o1 i/o2 i/o3 i/o4 gnd gnd nc nc nc nc 15 6 10 5v4 * 12 45 3, 8
ESD5304D will semiconductor ltd. 2 revision 1. 5 , 201 7 / 05 / 10 absolute m aximum r ating s electrical characteristics (t a = 25 o c , unless otherwise noted) definit ions of electrical characteristics parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 48 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec610 00 - 4 - 2 contact discharge 2 0 j unction t emperature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
ESD5304D will semiconductor ltd. 3 revision 1. 5 , 201 7 / 05 / 10 electrical characteristics ( t a = 25 o c, unless otherwise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, avera ging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v <1 1 00 n a r ever se breakdown voltage v br i t = 1ma 7.0 8. 0 9.0 v forward voltage v f i t = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 14 v clamping voltage 2 ) v cl v esd = +8kv 14 v dynamic resistance 1) r dyn 0.33 clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 10 v i pp = 4 a, t p = 8/20s 12 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0. 25 0. 40 pf
ESD5304D will semiconductor ltd. 4 revision 1. 5 , 201 7 / 05 / 10 typical characteristics ( t a = 25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 1 2 3 4 5 8 10 12 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 1 2 3 4 5 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pin any i/o pin to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t
ESD5304D will semiconductor ltd. 5 revision 1. 5 , 201 7 / 05 / 10 typical characteristics ( t a = 25 o c, unless otherwise noted ) esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) 0 2 4 6 8 10 12 14 16 18 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
will semiconductor ltd. 6 revision 1.5, 2017/05/10 package outline dimensions dfn2510-10l recommended land pattern (unit: mm) 0.60 0.20 0.20 0.50 0.40 0.50 symbol dimensions in millimeters min. typ. max. a 0.500 0.575 0.650 a1 0.000 - 0.050 a3 0.150 ref. d 2.400 2.500 2.600 e 0.900 1.000 1.100 d1 0.300 0.400 0.500 e1 0.300 0.455 0.610 b 0.130 0.190 0.250 e 0.500 bsc l 0.280 0.390 0.500 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met.
will semiconductor ltd. 7 revision 1.5, 2017/05/10 tape and reel information reel dimensions tape dimensions w p1 quadrant assignments for pin1 orientation in tape q1 q2 q4 q3 q1 q2 q4 q3 rd reel dimension w overall width of the carrier tape p1 pitch between successive cavity centers pin1 pin1 quadrant user direction of feed rd 7inch 13inch 8mm 12mm 2mm 4mm 8mm q1 q2 q3 q4
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